SolarEdge and Infineon Technologies have extended their collaboration in order to advance solid-state circuit breaker technology for high-voltage DC distribution in AI and hyperscale data centres. The collaboration addresses a key challenge in the adoption of 800 VDC architecture – that the safe operation of increasingly power-dense infrastructure requires very fast fault-isolation to achieve selectivity while maintaining high efficiency.
The collaboration advances a DC-native power architecture from medium-voltage grid connection through distribution to the rack, aiming to support higher density, greater reliability and reduced environmental impact for AI data centres. Extending the collaboration to solid-state protection addresses what the two companies see as a critical gap in the distribution layer between a solid-state transformer (SST) and the compute rack, by advancing a comprehensive grid-to-rack solution. SolarEdge is leading the design of its SSCB solution, with Infineon providing its silicon carbide (SiC) JFET technology at the core of the protection devices.
As rapidly increasing AI compute density is driving the industry towards higher-voltage DC distribution. Solid state circuit breakers address one of the most fundamental challenges in enabling safe and reliable operation. Compared to conventional AC systems, DC protection presents a different engineering challenge. Without a natural current zero, mechanical interruption faces arcing challenges, because it is relatively slow, and therefore requires a different approach to circuit protection. SSCBs are designed to interrupt faults within a few microseconds, with no mechanical contacts to separate; while Infineon’s CoolSiC JFET devices are said to deliver efficient operation and superior robustness. Together, these capabilities help protect high-value compute equipment and enable more compact, higher-density DC distribution designs.
The collaboration builds directly on SolarEdge’s SST platform with Infineon SiC components, first announced in November last year.
The SST is designed to enable direct medium-voltage (13.8-34.5 kV) to 800-1500 VDC conversion at over 99% efficiency, collapsing multiple conversion stages into a single solution while reducing physical footprint.
“High-density AI infrastructure at 800 VDC demands uncompromising efficiency and protection”, said Shuki Nir, CEO of SolarEdge. “Solid-state protection will enable operators to achieve both, delivering ultra-fast and dependable fault isolation without sacrificing conversion performance. Infineon’s silicon carbide technology is what makes it practical at scale.”
“Today’s data infrastructures have become more vulnerable to electrical faults, thereby driving the demand for smarter, faster and more robust power distribution systems,” said Andreas Weisl, executive VP and chief sales officer of Industrial & Infrastructure at Infineon. “By combining our advanced silicon carbide JFET technology with SolarEdge’s expertise in final power distribution, we are addressing these demands to ensure fast, safe and reliable operations in AI data centres.”
