NoMIS Power Corporation, a prominent company in advanced silicon carbide (SiC) power semiconductor technology, has achieved a major high-voltage milestone: the successful demonstration of its first 6.5 kV large-die SiC MOSFET (metal oxide semiconductor field-effect transistor). The device has been measured at over 8 kV blocking, 90 mΩ on-resistance, and a 55 amp drain current. The result carries NoMIS Power’s established planar SiC device technology from its 3.3 kV device into the high-voltage class. The company now has a clear and demonstrable path toward realising its 10 kV MOSFETs and 20 kV SiC IGBTs (insulated gate bipolar transistor). NoMIS now has three high-voltage SiC devices in its portfolio – its existing 3.3 kV device in production, its 6.5 kV device at the sampling stage. And a 10 kV MOSFET device in development.
The 3.3 kV unit, available now, spans 80 mΩ (34 A), 50 mΩ (55 A), and 25 mΩ (105 A) devices in a TO-247-4L-HC package and bare die, complemented by 50–160 mΩ SiC bi-directional switches and a 500 A half-bridge power module.
The 6.5 kV device is sampling now to US-based customers for evaluation, with standard production parts scheduled for Q4 2026, and anchors an expanding 6.5 kV line, with resistance variants, small-die devices, hybrid junction-barrier Schottky FET (JBSFET) devices, and standalone diodes.
JBSFET construction prevents body diode degradation issues, making it very robust for critical applications. Target applications include high-voltage direct current (HVDC), solid-state transformers, pulsed power, rail traction, and MW-scale EV charging. Standard production 6.5 kV parts are scheduled for Q4 2026 and will be available to commercial customers.
Dr Adam Morgan, co-founder and CEO of NoMIS Power, commented: “High-voltage SiC is becoming foundational to data-centre, grid, aerospace, and defence power systems – we’re building the domestic source the industry can qualify against, from 3.3 kV and 6.5 kV today to 10 kV MOSFETs and 20 kV SiC IGBTs on our roadmap.”
